Datenblatt-Suchmaschine für elektronische Bauteile |
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2SC3122 Datenblatt(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SC3122 Datenblatt(HTML) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
2 / 2 page www.kexin.com.cn 2 SMD Type IC SMD Type Transistors Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cut-off current ICBO VCB = 25V, IE = 0 100 nA Emitter cut-off current IEBO VEB =2V, IC = 0 100 nA Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 30 V DC current gain hFE VCE =10V, IC = 2 mA 60 150 300 Reverse Transfer Capacitance Cre VCB=10V,IE=0,f=1MHz 0.3 0.45 pF Transition Frequency fT VCE =10V, IC = 2mA 400 650 MHz Power Gain Gpe Vce=12V,VAGC=1.4V,f=200MHz 20 24 28 dB Noise Figure NF 2.0 3.2 dB AGC Voltage VAGC 3.6 4.4 5.1 V *VAGC measured by test circuit shown in Fig.1 when power gain is reduced to 30dB compared that of VAGC at 1.4V VCC=12V,GR=30dB,f=200MHZ * Marking Marking HD 2SC3122 |
Ähnliche Teilenummer - 2SC3122 |
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Ähnliche Beschreibung - 2SC3122 |
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