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2SC3513 Datenblatt(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

Teilenummer 2SC3513
Bauteilbeschribung  Silicon NPN Epitaxial
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Hersteller  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Direct Link  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

2SC3513 Datenblatt(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd

  2SC3513 Datasheet HTML 1Page - Guangdong Kexin Industrial Co.,Ltd  
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SMD Type
IC
www.kexin.com.cn
1
SMD Type
Transistors
0.4+0.1
-0.1
2.9+0.1
-0.1
0.95+0.1
-0.1
1.9+0.1
-0.1
1.Base
2.Emitter
3.collector
12
3
Unit: mm
SOT-23
0.1+0.05
-0.01
Silicon NPN Epitaxial
2SC3513
Features
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
15
V
Collector-emitter voltage
VCEO
11
V
Emitter-base voltage
VEBO
2V
Collector current
IC
500
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
150
Storage temperature
Tstg
-55to+150
Marking
Marking
IS-
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector to base breakdown voltage
V(BR)CBO
IC=10mA, IE =0
15
V
Collector cutoff current
ICEO
VCE =10V, RBE =
1ìA
Emitter cutoff current
IEBO
VEB =1V, IC =0
1
ìA
Collector cutoff current
ICBO
VCB =12V, IE =0
1
ìA
DC current transfer ratio
hFE
VCE =5V, IC = 20 mA
50
120
250
Collector output capacitance
Cob
VCB =5V, IE = 0, f = 1 MHz
1.0
1.5
pF
Gain bandwidth product
fT
VCE =5V, IC =20mA
6.0
GHz
Power gain
PG
VCE =5V, IC = 20 mA,f = 900 MHz
10
dB
Noise figure
NF
VCE =5V, IC = 5 mA,f = 900 MHz
1.6
dB


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