2SK3147S datasheet(1/1 Pages) KEXIN

Teilenummer	2SK3147S

Bauteilbeschribung	Silicon N Cannel MOSFET

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Hersteller	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

Direct Link	http://www.kexin.com.cn/index.asp

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SMD Type

IC

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1

MOSFET

SMD Type

2.3

0.60+0.1

-0.1

6.50+0.15

-0.15

0.80+0.1

-0.1

4.60+0.15

-0.15

5.30+0.2

-0.2

2.30+0.1

-0.1

0.50+0.8

-0.7

0.127

max

TO-252

Unit: mm

1Gate

2Drain

3Source

Silicon N Cannel MOSFET

2SK3147S

Features

Low on-resistance

RDS =0.1

typ.

High speed switching

4 V gate drive device can be driven from 5 V source

Absolute Maximum Ratings Ta = 25

Parameter

Symbol

Rating

Unit

Drain to source voltage

VDSS

100

V

Gate to source voltage

VGSS

20

V

ID

5

A

Idp *

20

A

Power dissipation

PD

20

W

Channel temperature

Tch

150

Storage temperature

Tstg

-55to+150

*PW

10

s,Duty Cycle

1%

Drain current

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

Drain cut-off current

IDSS

VDS=100V,VGS=0

10

A

Gate leakage current

IGSS

VGS=

16V,VDS=0

10

A

Gate to source cut off voltage

VGS(off)

VDS=10V,ID=1mA

1..0

2.5

V

Forward transfer admittance

Yfs

VDS=10V,ID=3A

3.5

6

S

VGS=10V,ID=3A

0.1

0.13

VGS=4V,ID=3A

0.13

0.18

Input capacitance

Ciss

420

pF

Output capacitance

Coss

185

pF

Reverse transfer capacitance

Crss

100

pF

Turn-on delay time

ton

10

ns

Rise time

tr

35

ns

Turn-off delay time

toff

110

ns

Fall time

tf

60

ns

VDS=10V,VGS=0,f=1MHZ

ID=3A,VGS(on)=10V,RL=10

RDS(on)

Drain to source on-state resistance

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