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KDD3680 Datenblatt(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

Teilenummer KDD3680
Bauteilbeschribung  100V N-Channel Power Trench MOSFET
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Hersteller  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Direct Link  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

KDD3680 Datenblatt(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd

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SMD Type
IC
www.kexin.com.cn
1
SMD Type
Transistors
2.3
0.60+0.1
-0.1
6.50+0.15
-0.15
0.80+0.1
-0.1
4.60+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
0.127
max
TO-252
Unit: mm
1. Gate
2. Drain
3. Source
100V N-Channel Power Trench MOSFET
KDD3680
Features
25 A, 100 V. RDS(ON) = 46m
@VGS =10V
RDS(ON) = 51m
@VGS =6V
Low gate charge (38 nC typical)
Fast switching speed
High performance trench technology for extremely low RDS(ON)
High power and current handling capability
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Drain to Source Voltage
VDSS
100
V
Gate to Source Voltage
VGS
20
V
Drain Current Continuous (Note 1)
25
A
Drain Current Pulsed
100
A
Power dissipation @ TC=25
(Note 1)
68
Power dissipation @ Ta=25
(Note 1a)
3.8
Power dissipation @ Ta=25
(Note 1b)
1.6
Operating and Storage Temperature
TJ,TSTG
-55to175
Thermal Resistance Junction to Case
R JC
2.2
/W
Thermal Resistance Junction to Ambient
R JA
96
/W
ID
PD
W


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