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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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KDD6030L Datenblatt(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
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KDD6030L Datenblatt(HTML) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
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2 / 2 page  www.kexin.com.cn 2 SMD Type IC SMD Type Transistors Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Drain-Source Avalanche Energy EAS Single Pulse, VDD =15V, ID= 12A (Note 2) 100 mJ Maximum Drain-Source Avalanche Current IAR ( Not 2) 12 A Drain-Source Breakdown Voltage BVDSS VGS =0V, ID = 250 A 30 V Breakdown Voltage Temperature Coefficient ID =250 A, Referenced to 25 24 mV/ Zero Gate Voltage Drain Current IDSS VDS =24V, VGS =0V 1 A Gate-Body Leakage IGSS VGS = 20 V, VDS =0V 100 nA Gate Threshold Voltage VGS(th) VDS =VGS,ID =250 A 11.9 3 V Gate Threshold Voltage Temperature Coefficient ID =250 A, Referenced to 25 -5 mV/ VGS =10V, ID = 12A 7.7 14.5 VGS =4.5 V, ID = 10A 9.9 21 VGS =10V, ID =12 A,TJ = 125 11.4 25 On-State Drain Current ID(on) VGS =10V, VDS =5V 50 A Forward Transconductance gFS VDS =10V, ID =12A 47 S Input Capacitance Ciss 1230 pF Output Capacitance Coss 325 pF Reverse Transfer Capacitance Crss 150 pF Gate Resistance RG VGS = 15 mV, f = 1.0 MHz 1.5 pF Turn-On Delay Time td(on) 10 19 ns Turn-On Rise Time tr 7 13 ns Turn-Off Delay Time td(off) 29 46 ns Turn-Off Fall Time tf 12 21 ns Total Gate Charge Qg 13 28 nC Gate-Source Charge Qgs 3.5 nC Gate-Drain Charge Qgd 5.1 nC Maximum Continuous Drain-Source Diode Forward Current IS 2.7 A Drain-Source Diode Forward Voltage VSD VGS =0V, IS = 2.9 A (Not 2) 0.76 1.2 V Diode Reverse Recovery Time trr 24 nS Diode Reverse Recovery Charge Qrr 13 nC IF =12A, diF/dt =100 A/ s VDS =15V, ID =12A,VGS =5V (Note 2) m RDS(on) Static Drain-Source On-Resistance VDD =15V, ID =1A,VGS =10V, RGEN =6 (Note 2) VDS =15V, VGS =0V,f = 1.0MHz KDD6030L |
Ähnliche Teilenummer - KDD6030L |
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Ähnliche Beschreibung - KDD6030L |
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