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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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2SK1284 Datenblatt(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SK1284 Datenblatt(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 1 page  SMD Type IC www.kexin.com.cn 1 MOSFET SMD Type 2.3 0.60+0.1 -0.1 6.50+0.15 -0.15 0.80+0.1 -0.1 4.60+0.15 -0.15 5.30+0.2 -0.2 2.30+0.1 -0.1 0.50+0.8 -0.7 0.127 max TO-252 Unit: mm 1Gate 2Drain 3Source MOS Field Effect Power Transistor 2SK1284 Features Low on-state resistance RDS(on) 0.32 .@VGS=10V,ID=2A RDS(on) 0.40 @VGS=4V,ID=2A Low Ciss Ciss=500pF TYP. Built-in G-S Gate Protection Diode Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to source voltage VDSS 100 V Gate to source voltage VGSS 20 V Drain current (DC) ID 3.0 A Drain current(pulse) * ID 12 A Power dissipation TC=25 2.0 W TA=25 1.0 W Channel temperature Tch 150 Storage temperature Tstg -55to+150 *PW 10ms, duty cycle 5% PD Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Drain cut-off current IDSS VDS=100V,VGS=0 10 A Gate leakage current IGSS VGS= 20V,VDS=0 10 A Gate to source cutoff voltage VGS(off) VDS=10V,ID=1mA 1.0 2.5 V Forward transfer admittance Yfs VDS=10V,ID=2A 2.4 s VGS=10V,ID=2A 0.26 0.32 VGS=4.0V,ID=2A 0.32 0.40 Input capacitance Ciss 500 pF Output capacitance Coss 160 pF Reverse transfer capacitance Crss 20 pF Turn-on delay time td(on) 40 ns Rise time tr 55 ns Turn-off delay time td(off) 500 ns Fall time tf 120 ns VDS=10V,VGS=0,f=1MHZ ID=2A,VGS(on)=10V,RL=25 ,VDD=50V,RG=10 Drain to source on-state resistance RDS(on) |
Ähnliche Teilenummer - 2SK1284 |
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Ähnliche Beschreibung - 2SK1284 |
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