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2SK2059S Datenblatt(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

Teilenummer 2SK2059S
Bauteilbeschribung  Silicon N-Channel MOSFET
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Hersteller  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Direct Link  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

2SK2059S Datenblatt(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd

  2SK2059S Datasheet HTML 1Page - Guangdong Kexin Industrial Co.,Ltd  
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SMD Type
IC
www.kexin.com.cn
1
MOSFET
SMD Type
2.3
0.60+0.1
-0.1
6.50+0.15
-0.15
0.80+0.1
-0.1
4.60+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
0.127
max
TO-252
Unit: mm
1Gate
2Drain
3Source
Silicon N-Channel MOSFET
2SK2059S
Features
Low on-resistance
High speed switching
No Secondary Breakdown
Suitable for Switching regulator, DC - DC converter
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Drain to source voltage
VDSS
600
V
Gate to source voltage
VGSS
30
V
Drain current
ID
3A
Power dissipation
PD
20
W
Channel temperature
Tch
150
Storage temperature
Tstg
-55to+150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Drain cut-off current
IDSS
VDS=500V,VGS=0
100
A
Gate leakage current
IGSS
VGS=
25V,VDS=0
10
A
Gate to source cutoff voltage
VGS(off)
VDS=10V,ID=1mA
2.0
3.0
V
Forward transfer admittance
Yfs
VDS=10V,ID=10A
1.2
2.0
S
Drain to source on-state resistance
RDS(on)
VGS=10V,ID=1A
3.8
5.0
Input capacitance
Ciss
295
pF
Output capacitance
Coss
70
pF
Reverse transfer capacitance
Crss
12
pF
Turn-on delay time
td(on)
8ns
Rise time
tr
25
ns
Turn-off delay time
td(off)
65
ns
Fall time
tf
30
ns
VDS=10V,VGS=0,f=1MHZ
ID=1A,VGS(on)=10V,RL=30


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