Datenblatt-Suchmaschine für elektronische Bauteile |
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2SK3353 Datenblatt(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SK3353 Datenblatt(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 1 page SMD Type MOSFET 1 www.kexin.com.cn 1.27+0.1 -0.1 1.27+0.1 -0.1 5.08+0.1 -0.1 0.1max 2.54+0.2 -0.2 2.54 4.57+0.2 -0.2 0.4+0.2 -0.2 0.81+0.1 -0.1 TO-263 Unit: mm 1Gate 2Drain 3 Source MOS Field Effect Transistor 2SK3353 Features Super low on-state resistance: RDS(on)1 =9.5 m MAX. (VGS =10V, ID =41A) RDS(on)2 =14m MAX. (VGS =4V, ID =41A) Low Ciss:Ciss = 4650 pF TYP. Built-in gate protection diode Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to source voltage VDSS 60 V Gate to source voltage VGSS(AC) 20 V ID 82 A Idp * 328 A Power dissipation TA=25 1.5 TC=25 95 Channel temperature Tch 150 Storage temperature Tstg -55to+150 *PW 10 s,Duty Cycle 1% Drain current PD W Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Drain cut-off current IDSS VDS=60V,VGS=0 100 A Gate leakage current IGSS VGS= 20V,VDS=0 10 A Gat cutoff voltage VGS(off) VDS=10V,ID=1mA 2.5 3.5 V Forward transfer admittance Yfs VDS=10V,ID=41A 30 50 S VGS=10V,ID=41A 7.5 9.5 m VGS=4V,ID=41A 10.5 14 m Input capacitance Ciss 4650 pF Output capacitance Coss 780 pF Reverse transfer capacitance Crss 380 pF Turn-on delay time ton 100 ns Rise time tr 1550 ns Turn-off delay time toff 280 ns Fall time tf 420 ns Total Gate Charge QG 90 nC Gate to Source Charge QGS 14 nC Gate to Drain Charge QGD 38 nC VDS=10V,VGS=0,f=1MHZ ID=41A,VGS(on)=10V,RG=10 ,VDD=30V VDD = 42V, VGS =10V, ID = 82A Drain to source on-state resistance RDS(on) |
Ähnliche Teilenummer - 2SK3353 |
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Ähnliche Beschreibung - 2SK3353 |
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