Datenblatt-Suchmaschine für elektronische Bauteile |
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BU306F Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BU306F Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU306F/307F DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 300V(Min)- BD306F 400V(Min)- BD307F ·Collector Current-8A APPLICATIONS ·Designed for use in switching regulators, inverters, motor controls, solenoid/relay drivers and deflection circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BU306F 600 VCBO Collector-Base Voltage BU307F 700 V BU306F 300 VCEO Collector-Emitter Voltage BU307F 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 16 A IB B Base Current 4 A IBM Base Current-Peak 8 A PC Collector Power Dissipation @ TC=25℃ 20 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 6.12 ℃/W isc Website:www.iscsemi.cn |
Ähnliche Teilenummer - BU306F |
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Ähnliche Beschreibung - BU306F |
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