BYG10D datasheet(2/5 Pages) VISHAY

Teilenummer	BYG10D

Bauteilbeschribung	Silicon Mesa SMD Rectifier

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Hersteller	VISHAY [Vishay Siliconix]

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BYG10

Vishay Telefunken

www.vishay.de

• FaxBack +1-408-970-5600

Rev. 3, 24-Jun-98

2 (5)

Document Number 86008

Electrical Characteristics

Tj = 25_C

Parameter

Test Conditions

Type

Symbol

Min

Typ

Max

Unit

Forward voltage

IF=1A

VF

1.1

V

g

IF=1.5A

VF

1.15

V

Reverse current

VR=VRRM

IR

1

mA

VR=VRRM, Tj=100°C

IR

10

mA

Reverse recovery time

IF=0.5A, IR=1A, iR=0.25A

trr

4

ms

Characteristics (Tj = 25_C unless otherwise specified)

0

40

80

120

160

0.01

0.1

1

10

100

Tj – Junction Temperature ( °C )

200

94 9180

VR =VRRM

Figure 1. Typ. Reverse Current vs. Junction Temperature

0

0.4

0.8

1.2

1.6

2.0

Tamb – Ambient Temperature ( °C )

94 9179

40

80

120

160

200

125K/W

100K/W

150K/W

RthJA=25K/W

Figure 2. Max. Average Forward Current vs.

Ambient Temperature

0

0.6

1.2

1.8

2.4

0.01

0.1

1

10

100

VF – Forward Voltage ( V )

3.0

94 9284

Tj =25°C

Tj =75°C

Tj = 125°C

Figure 3. Typ. Forward Current vs. Forward Voltage

0

1000

2000

3000

4000

5000

94 9544

0.2

0.4

0.6

0.8

IF – Forward Current ( A )

1.0

Tamb= 100°C

Tamb= 125°C

Tamb=50°C

IR=0.5A, iR=0.125A

Tamb =25°C

Tamb =75°C

Figure 4. Typ. Reverse Recovery Time vs.

Forward Current

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