BYG21M datasheet(1/5 Pages) VISHAY

Teilenummer	BYG21M

Bauteilbeschribung	Fast Silicon Mesa SMD Rectifier

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Hersteller	VISHAY [Vishay Siliconix]

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BYG21

Vishay Telefunken

www.vishay.de

• FaxBack +1-408-970-5600

Rev. 3, 24-Jun-98

1 (5)

Document Number 86010

Fast Silicon Mesa SMD Rectifier

Features

D Glass passivated junction

D Low reverse current

D Soft recovery characteristics

D Fast reverse recovery time

D Good switching characteristics

D Wave and reflow solderable

Applications

Surface mounting

Fast rectifier

Freewheeling diodes in SMPS and converters

Snubber diodes

15 811

Absolute Maximum Ratings

Tj = 25_C

Parameter

Test Conditions

Type

Symbol

Value

Unit

Reverse voltage

BYG21K

VR=VRRM

800

V

g

=Repetitive peak reverse voltage

BYG21M

VR=VRRM

1000

V

Peak forward surge current

tp=10ms,

half sinewave

IFSM

30

A

Average forward current

IFAV

1.5

A

Junction and storage

temperature range

Tj=Tstg

–55...+150

°C

Pulse energy in avalanche mode,

non repetitive

(inductive load switch off)

I(BR)R=1A, Tj=25°C

ER

20

mJ

Maximum Thermal Resistance

Tj = 25_C

Parameter

Test Conditions

Symbol

Value

Unit

Junction lead

TL=const.

RthJL

25

K/W

Junction ambient

mounted on epoxy–glass hard tissue

RthJA

150

K/W

mounted on epoxy–glass hard tissue, 50mm2 35

mm Cu

RthJA

125

K/W

mounted on Al–oxid–ceramic (Al2O3), 50mm2 35mm Cu

RthJA

100

K/W

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