Datenblatt-Suchmaschine für elektronische Bauteile |
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LS4151 Datenblatt(PDF) 1 Page - Vishay Siliconix |
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LS4151 Datenblatt(HTML) 1 Page - Vishay Siliconix |
1 / 4 page LS4151 Vishay Telefunken Rev. 3, 01-Apr-99 1 (4) www.vishay.de • FaxBack +1-408-970-5600 Document Number 85563 Silicon Epitaxial Planar Diode Features D Electrical data identical with the device 1N4151 D Quadro Melf package Applications Extreme fast switches 96 12009 Absolute Maximum Ratings Tj = 25_C Parameter Test Conditions Type Symbol Value Unit Repetitive peak reverse voltage VRRM 75 V Reverse voltage VR 50 V Peak forward surge current tp=1ms IFSM 2 A Repetitive peak forward current IFRM 500 mA Forward current IF 300 mA Average forward current VR=0 IFAV 150 mA Power dissipation PV 500 mW Junction temperature Tj 175 °C Storage temperature range Tstg –65...+175 °C Maximum Thermal Resistance Tj = 25_C Parameter Test Conditions Symbol Value Unit Junction ambient on PC board 50mmx50mmx1.6mm RthJA 500 K/W |
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