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2SD334 Datenblatt(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD334 Datenblatt(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD334 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0 80 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A B 2 V VBE(on) Base-Emitter On Voltage IC= 1A ; VCE= 4V 2.5 V VCB= 40V; IE= 0 50 μA ICBO Collector Cutoff Current VCB= 110V; IE= 0 1 mA hFE DC Current Gain IC= 1A ; VCE= 4V 40 260 hFE Classifications R O Y 40-80 70-150 130-260 isc Website:www.iscsemi.cn |
Ähnliche Teilenummer - 2SD334 |
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Ähnliche Beschreibung - 2SD334 |
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