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TSAL7300 Datenblatt(PDF) 2 Page - Vishay Siliconix

Teilenummer TSAL7300
Bauteilbeschribung  GaAs/GaAlAs IR Emitting Diode in 짰5 mm (T-13/4) Package
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Hersteller  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

TSAL7300 Datenblatt(HTML) 2 Page - Vishay Siliconix

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TSAL7300
Vishay Telefunken
2 (6)
Rev. 1, 20-May-99
www.vishay.de
• FaxBack +1-408-970-5600
Document Number 81013
Absolute Maximum Ratings
Tamb = 25_C
Parameter
Test Conditions
Symbol
Value
Unit
Reverse Voltage
VR
5
V
Forward Current
IF
100
mA
Peak Forward Current
tp/T = 0.5, tp = 100 ms
IFM
200
mA
Surge Forward Current
tp = 100 ms
IFSM
1,5
A
Power Dissipation
PV
210
mW
Junction Temperature
Tj
100
°C
Operating Temperature Range
Tamb
–55...+100
°C
Storage Temperature Range
Tstg
–55...+100
°C
Soldering Temperature
t
x 5sec, 2 mm from case
Tsd
260
°C
Thermal Resistance Junction/Ambient
RthJA
350
K/W
Basic Characteristics
Tamb = 25_C
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
Forward Voltage
IF = 100 mA, tp = 20 ms
VF
1.35
1.6
V
g
IF = 1 A, tp = 100 ms
VF
2.6
3
V
Temp. Coefficient of VF
IF = 100 mA
TKVF
–1.875
mV/K
Reverse Current
VR = 5 V
IR
10
mA
Junction Capacitance
VR = 0, f = 1 MHz, E = 0
Cj
25
pF
Radiant Intensity
IF = 100 mA, tp = 20 ms
Ie
30
45
mW/sr
y
IF = 1 A, tp = 100 ms
Ie
260
350
mW/sr
Radiant Power
IF = 100 mA, tp = 20 ms
fe
35
mW
Temp. Coefficient of
fe
IF = 20 mA
TKfe
–0.6
%/K
Angle of Half Intensity
ϕ
±22
deg
Peak Wavelength
IF = 100 mA
lp
940
nm
Spectral Bandwidth
IF = 100 mA
Dl
50
nm
Temp. Coefficient of
lp
IF = 100 mA
TKlp
0.2
nm/K
Rise Time
IF = 100 mA
tr
800
ns
IF = 1 A
tr
500
ns
Fall Time
IF = 100 mA
tf
800
ns
IF = 1 A
tf
500
ns
Virtual Source Diameter
method: 63% encircled
energy
ø
2.1
mm


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