STB434S datasheet(3/8 Pages) SAMHOP

Teilenummer	STB434S

Bauteilbeschribung	N-Channel Logic Level Enhancement Mode Field Effect Transistor

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Hersteller	SAMHOP [SamHop Microelectronics Corp.]

Direct Link	http://www.samhop.com.tw

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3 / 8 page

STB/P434S

Ver 1.0

www.samhop.com.tw

Nov,14,2008

3

T j ( °

C )

VDS, Drain-to-Source Voltage(V)

Figure 1. Output Characteristics

VGS, Gate-to-Source Voltage(V)

Figure 2. Transfer Characteristics

ID, Drain Current(A)

Tj, Junction Temperature(° C )

Figure 3. On-Resistance vs. Drain Current

and Gate Voltage

Figure 4. On-Resistance Variation with Drain

Current and Temperature

Tj, Junction Temperature(° C )

Figure 5. Gate Threshold Variation

with Temperature

Tj, Junction Temperature(° C )

Figure 6. Breakdown Voltage Variation

with Temperature

80

60

40

20

0

0.5

1

1.5

2

2.5

3

100

V GS =10V

V GS =3V

V GS =2.5V

V GS =3.5V

V GS =4V

60

48

36

24

0

0.7

1.4

2.1

2.8

3.5

4.2

12

25 C

-55 C

T j=125 C

16

12

8

4

1

20

40

60

80

100

1

VGS=10V

VGS=4.5V

20

2.0

1.8

1.6

1.4

1.2

1.0

0

25

50

125

100

75

VGS=10V

ID=30A

VGS=4.5V

ID=25A

150

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

-50

-25

0

25

50

75

100 125 150

V DS =V GS

ID=250uA

-50

-25

0

25

50

75

100 125 150

1.40

1.30

1.20

1.10

1.00

0.90

0.80

ID=250uA

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STB434S Datenblatt(PDF) 3 Page - SamHop Microelectronics Corp.

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