Datenblatt-Suchmaschine für elektronische Bauteile |
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STU409DH Datenblatt(PDF) 1 Page - SamHop Microelectronics Corp. |
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STU409DH Datenblatt(HTML) 1 Page - SamHop Microelectronics Corp. |
1 / 11 page Dual E nhancement Mode Field E ffect Transistor ( N and P Channel) May 29 2007 ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted) Parameter S ymbol N-Channel P-Channel Unit Drain-S ource Voltage VDS V Gate-S ource Voltage VGS V Drain Current-Continuous @ Tc -Pulsed ID 11 A A A W IDM Drain-S ource Diode Forward Current IS Maximum Power Dissipation PD Operating Junction and S torage Temperature R ange TJ, TS TG -55 to 175 C a 40 8 -40 -14 -6 1 P R ODUC T S UMMAR Y V DS S ID R DS (ON) ( m W ) Max 40V 18A 24 @ VGS = 10V 30 @ V GS = 4.5V (N-C hannel) P R ODUC T S UMMAR Y V DS S ID -40V -14A 35 @ V GS = -10V 50 @ V GS = -4.5V (P -C hannel) S amHop Microelectronics C orp. 20 -50 S T U409DH R DS (ON) ( m W ) Max 18 50 70 C Tc= 25 C Tc= 70 C 7.7 15 -11 A 25 C THE R MAL CHAR ACTE R IS TICS Thermal R esistance, Junction-to-Case Thermal R esistance, Junction-to-Ambient R JC 13.6 120 R JA /W C /W C N-ch P-ch TO-252-4L D1/D2 S 1 G1 S 2 G2 20 G 1 D1 S 1 G 2 D2 S 2 |
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