Datenblatt-Suchmaschine für elektronische Bauteile |
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2SD315 Datenblatt(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD315 Datenblatt(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 3 page Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD315 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0 60 V VCEsat Collector-emitter saturation voltage IC=2A; IB=0.2A 1.0 V VBE Base-emitter on voltage IC=1A ; VCE=2V 1.5 V ICBO Collector cut-off current VCB=20V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=4V; IC=0 1.0 mA hFE-1 DC current gain IC=1A ; VCE=2V 40 320 hFE-2 DC current gain IC=0.1A ; VCE=2V 40 fT Transition frequency IC=0.5A ; VCE=5V 8 MHz hFE-1 Classifications C D E F 40-80 60-120 100-200 160-320 2 |
Ähnliche Teilenummer - 2SD315 |
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Ähnliche Beschreibung - 2SD315 |
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