Datenblatt-Suchmaschine für elektronische Bauteile |
|
2SD1236L Datenblatt(PDF) 2 Page - Inchange Semiconductor Company Limited |
|
2SD1236L Datenblatt(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 4 page Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD1236L CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=1mA ;RBE=∞ 80 V V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 90 V V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 6 V VCEsat Collector-emitter saturation voltage IC=3A; IB=0.3A 0.4 V ICBO Collector cut-off current VCB=80V; IE=0 100 μA IEBO Emitter cut-off current VEB=4V; IC=0 100 μA hFE-1 DC current gain IC=1A ; VCE=2V 70 280 hFE-2 DC current gain IC=3A ; VCE=2V 30 fT Transition frequency IC=1A ; VCE=5V 20 MHz Switching times ton Turn-on time 0.1 μs ts Storage time 1.2 μs tf Fall time IC=10IB1=-10IB2=2A VCC=50V,RL=25Ω 0.4 μs hFE-1 Classifications Q R S 70-140 100-200 140-280 |
Ähnliche Teilenummer - 2SD1236L |
|
Ähnliche Beschreibung - 2SD1236L |
|
|
Link URL |
Privatsphäre und Datenschutz |
ALLDATASHEETDE.COM |
War ALLDATASHEET hilfreich? [ DONATE ] |
Über Alldatasheet | Werbung | Kontakt | Privatsphäre und Datenschutz | Linktausch | Hersteller All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |