Datenblatt-Suchmaschine für elektronische Bauteile |
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2SD1399 Datenblatt(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD1399 Datenblatt(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 3 page Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD1399 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector- emitter breakdown voltage IC=100mA; RBE=∞ 800 V V(BR)CBO Collector-base breakdown voltage IC=5mA; IE=0 1500 V V(BR)EBO Emitter-base breakdown voltage IE=200mA; IC=0 7 V VCEsat Collector-emitter saturation voltage IC=5A; IB=1A 5.0 V VBEsat Base-emitter saturation voltage IC=5A; IB=1A 1.5 V ICBO Collector cut-off current VCB=800V; IE=0 10 μA IEBO Emitter cut-off current VEB=4V; IC=0 40 130 mA hFE DC current gain IC=1A ; VCE=5V 8 fT Transition frequency IC=1A ; VCE=10V 3 MHz tf Fall time IC=5A;IB1=1A; IB2=-2A, VCC=200V; RL=40Ω 0.7 μs VF Diode forward voltage IEC=6A 2.0 V |
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Ähnliche Beschreibung - 2SD1399 |
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