Datenblatt-Suchmaschine für elektronische Bauteile |
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2SC867 Datenblatt(PDF) 2 Page - Savantic, Inc. |
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2SC867 Datenblatt(HTML) 2 Page - Savantic, Inc. |
2 / 3 page SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC867 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=30mA; IB=0 150 V V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 5 V VCEsat Collector-emitter saturation voltage IC=1A; IB=0.2 A 1.0 V VBEsat Base-emitter saturation voltage IC=1A; IB=0.2 A 1.5 V ICBO Collector cut-off current VCB=400V;IE=0 100 µA IEBO Emitter cut-off current VEB=5V; IC=0 100 µA hFE DC current gain IC=0.1A ; VCE=3V 50 fT Transition frequency IC=0.2A ; VCE=10V 8 MHz |
Ähnliche Teilenummer - 2SC867 |
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Ähnliche Beschreibung - 2SC867 |
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