Datenblatt-Suchmaschine für elektronische Bauteile |
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2SD2586 Datenblatt(PDF) 2 Page - Savantic, Inc. |
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2SD2586 Datenblatt(HTML) 2 Page - Savantic, Inc. |
2 / 4 page SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD2586 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)EBO Emitter-base breakdown voltage IC=300mA ;IB=0 5 V VCEsat Collector-emitter saturation voltage IC=3.5A; IB=0.8A 5 V VBEsat Base-emitter saturation voltage IC=3.5A; IB=0.8A 0.9 1.5 V ICBO Collector cut-off current VCB=1500V; IE=0 1 mA IEBO Emitter cut-off current VEB=5V; IC=0 70 250 mA hFE-1 DC current gain IC=1A ; VCE=5V 8 28 hFE-2 DC current gain IC=3.5A ; VCE=5V 4.4 8.5 VF Diode forward voltage IF=5A 1.5 2.0 V Cob Collector output capacitance IE=0 ; VCB=10V,f=1MHz 73 pF fT Transition frequency IC=0.1A ; VCE=10V 2.5 MHz Switching times : ts Storage time 7.5 10 µs tf Fall time ICP=3.5A;IB1=0.8A fH =15.75kHz 0.3 0.6 µs |
Ähnliche Teilenummer - 2SD2586 |
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Ähnliche Beschreibung - 2SD2586 |
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