Datenblatt-Suchmaschine für elektronische Bauteile |
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2SA1021 Datenblatt(PDF) 2 Page - Savantic, Inc. |
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2SA1021 Datenblatt(HTML) 2 Page - Savantic, Inc. |
2 / 3 page SavantIC Semiconductor Product Specification 2 Silicon PNP Power Transistors 2SA1021 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-1mA; RBE=8 -150 V V(BR)CBO Collector-base breakdown voltage IC=-10µA; IE=0 -150 V V(BR)EBO Emitter-base breakdown voltage IE=-10µA ; IC=0 -6 V VCEsat Collector-emitter saturation voltage IC=-500mA; IB=-50mA -0.5 V VBEsat Base-emitter saturation voltage IC=-500mA; IB=-50mA -1.2 V ICBO Collector cut-off current VCB=-120V; IE=0 -1.0 µA IEBO Emitter cut-off current VEB=-4V; IC=0 -1.0 µA hFE DC current gain IC=-150mA ; VCE=-5V 60 320 fT Transition frequency IC=-50mA ; VCE=-10V 15 MHz |
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Ähnliche Beschreibung - 2SA1021 |
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