Datenblatt-Suchmaschine für elektronische Bauteile |
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2SA1051 Datenblatt(PDF) 2 Page - Savantic, Inc. |
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2SA1051 Datenblatt(HTML) 2 Page - Savantic, Inc. |
2 / 3 page SavantIC Semiconductor Product Specification 2 Silicon PNP Power Transistors 2SA1051 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ;IB=0 -150 V V(BR)CBO Collector-base breakdown voltage IC=-1mA ;IE=0 -150 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA ;IC=0 -5 V VCEsat Collector-emitter saturation voltage IC=-10A; IB=-1A -3.0 V VBE Base-emitter on voltage IC=-8A ; VCE=-5V -1.5 V ICBO Collector cut-off current VCB=-140V; IE=0 -10 µA IEBO Emitter cut-off current VEB=-5V; IC=0 -10 µA hFE-1 DC current gain IC=-1A ; VCE=-5V 55 160 hFE-2 DC current gain IC=-8A ; VCE=-5V 35 fT Transition frequency IC=-1A ; VCE=-10V 60 MHz |
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