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1N4006G Datenblatt(PDF) 1 Page - Chongqing Pingwei Enterprise co.,Ltd

Teilenummer 1N4006G
Bauteilbeschribung  TECHNICAL SPECIFICATIONS OF SILICON RECTIFIER
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Hersteller  CHONGQING [Chongqing Pingwei Enterprise co.,Ltd]
Direct Link  http://www.perfectway.cn
Logo CHONGQING - Chongqing Pingwei Enterprise co.,Ltd

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CHONGQING PINGYANG ELECTRONICS CO.,LTD.
１
1N4001G THRU 1N4007G
TECHNICAL SPECIFICATIONS OF SILICON RECTIFIER
VOLTAGE：50-1000V
CURRENT：1.0A
FEATURES
·High reliability
·Low leakage
·Low forward voltage drop
·High current capability
MECHANICAL DATA
·Case: Molded plastic
·Epoxy: UL94V-0 rate flame retardant
·Lead: MIL-STD- 202E, Method 208 guaranteed
·Polarity:Color band denotes cathode end
·Mounting position: Any
·Weight: 0.33 grams
MAXIMUM RATINGS AND ELECTRONICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz,resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL
1N4001G1N4002G 1N4003G1N4004G1N4005G 1N4006G1N4007G
units
Maximum Recurrent Peak Reverse Voltage
VRRM
50
100
200
400
600
800
1000
V
Maximum RMS Voltage
VRMS
35
70
140
280
420
560
700
V
Maximum DC Blocking Voltage
VDC
50
100
200
400
600
800
1000
V
Maximum Average Forward rectified Current
at TA=75°C
Io
1.0
A
Peak Forward Surge Current 8.3ms single half
sine-wave superimposed on rate load (JEDEC
method)
IFSM
30
A
Maximum Instantaneous forward Voltage at 1.0A
DC
VF
1.1
V
@ TA=25°C
5.0
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@ TA=100°C
500
Maximum Full Load Reverse Current Average
Full Cycle .375
”(9.5mm) lead length at T
L=75°C
IR
30
µA
Typical Junction Capacitance (Note)
CJ
15
pF
Typical Thermal Resistance
RθJA
50
°C/W
Notes:
Measured at 1MHz and applied reverse voltage of 4.0 volts
DO-41
1.0(25.4)
MIN.
.034(0.9)
.028(0.7) DIA.
.205(5.2)
.166(4.2)
1.0(25.4)
MIN.
.107(2.7)
.080(2.0) DIA.
Dimensions in inches and (millimeters)
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