Datenblatt-Suchmaschine für elektronische Bauteile |
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2SC3838 Datenblatt(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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2SC3838 Datenblatt(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
1 / 3 page Elektronische Bauelemente 2SC3838 50 mA, 20 V NPN Plastic Encapsulated Transistor 01-June-2005 Rev. A Page 1 of 3 Top View A L C B D G H J F K E 1 2 3 1 2 3 1 Base 2 Emitter Collector 3 RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES High transition frequency Small rbb’·Cc and high gain Small NF PACKAGE INFORMATION Weight: 0.0078g (Approximately) MARKING AD ABSOLUTE MAXIMUM RATINGS (T A = 25°C unless otherwise noted) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 20 V Collector to Emitter Voltage VCEO 11 V Emitter to Base Voltage VEBO 3 V Collector Current - Continuous IC 50 mA Collector Power Dissipation Pc 100 mW Junction, Storage Temperature TJ, TSTG +150, -55 ~ +150 °C ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector-Base Breakdown Voltage V(BR)CBO 20 - - V IC=10μA, IE=0 Collector-Emitter Breakdown Voltage V(BR)CEO 11 - - V IC= 1mA, IB=0 Emitter-Base Breakdown Voltage V(BR)EBO 3 - - V IE=10μA, IC=0 Collector Cut-Off Current ICBO - - 0.5 μA VCB=10V, IE=0 Emitter Cut-Off Current IEBO - - 0.5 μA VEB= 2V, IC=0 Collector-Emitter Saturation Voltage VCE(sat) - - 500 mV IC=-10mA, IB= 5mA DC Current Gain hFE 56 - 180 VCE= 10V, IC=5mA Transition Frequency fT 1.4 - - GHz VCE=10V, IC= 10mA, f = 500MHz Output Capacitance Cob - - 1.5 pF VCB=10V, IE=0A, f=1MHz Collector-Base Time Constant rbb’·Cc - - 12 pS IC=10mA,VCB=10V, f=31.8MHz Noise Figure F - 3.5 - dB VCE=6V, IC= 2mA, f = 500MHz, Rs = 50Ω CLASSIFICATION OF hFE Rank N P Range 56 - 120 82 - 180 SOT-23 Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 2.80 3.00 G 0.10 REF. B 2.25 2.55 H 0.55 REF. C 1.20 1.40 J 0.08 0.15 D 0.90 1.15 K 0.5 REF. E 1.80 2.00 L 0.95 TYP. F 0.30 0.50 |
Ähnliche Teilenummer - 2SC3838 |
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Ähnliche Beschreibung - 2SC3838 |
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