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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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BC338 Datenblatt(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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BC338 Datenblatt(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 3 page  Any changing of specification will not be informed individual BC337/BC338 NPN Plastic-Encapsulate Transistors http://www.SeCoSGmbH.com Elektronische Bauelemente FEATURES Power dissipation PCM : 0.625 W（Tamb=25℃） Collector current ICM : 0.8 A Collector-base voltage V(BR)CBO : BC337 50 V Operating and storage junction temperature range TJ，Tstg:-55℃ to +150℃ 1 2 TO-92 1. COLLECTOR 2. BASE . EMITTER 1 2 3 3 3 . BC338 30 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage BC337 BC338 VCBO Ic= -100µA , IE=0 50 30 V V Collector-emitter breakdown voltage BC337 BC338 VCEO IC= -10 mA , IB=0 45 25 V V Emitter-base breakdown voltage VEBO IE= -10µA, IC=0 5 V Collector cut-off current BC337 BC338 ICBO VCB= -45V, IE=0 VCB= -25V, IE=0 0.1 0.1 µA µA Collector cut-off current BC337 BC338 ICEO VCE= -40V, IB=0 VCE= -20 V, IB=0 0.2 0.2 µA µA Emitter cut-off current IEBO VEB= -4 V, IC=0 0.1 µA hFE(1) VCE=-1V, IC= -100mA 100 630 DC current gain hFE(2) VCE=-1V, IC= -300mA 60 Collector-emitter saturation voltage VCE(sat) IC=-500 mA, IB= -50 mA 0.7 V Base-emitter saturation voltage VBE(sat) IC= -500 mA, IB=-50 mA 1.2 V Transition frequency f T VCE= -5V, IC= -10mA f = 100MHz 210 MHz hFE CLASSIFICATION Classification 16 25 40 hFE1 100-250 160-400 250-630 28-Jun-2007 Rev. A Page 1 of 3 Base-emitter voltage VBE VCE=1V, IC= 300mA 1.2 V Collector Output Capacitance Cob VCB=10V,IE=0 f=1MHZ 15 pF RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free |
Ähnliche Teilenummer - BC338 |
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Ähnliche Beschreibung - BC338 |
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