MCR100-4U datasheet(1/3 Pages) SEMTECH_ELEC

Teilenummer	MCR100-4U

Bauteilbeschribung	Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors

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Hersteller	SEMTECH_ELEC [SEMTECH ELECTRONICS LTD.]

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Dated : 19/03/2007

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SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724)

MCR100…U Series

Sensitive Gate Silicon Controlled Rectifiers

Reverse Blocking Thyristors

Absolute Maximum Ratings (Ta = 25 OC)

Parameter

Symbol

Value

Unit

Peak Repetitive Off-State Voltage

4)

(TJ = -40 OC to 110 OC, Sine Wave, 50 to 60 Hz, Gate Open)

MCR100-4U

MCR100-6U

MCR100-8U

VDRM, VRRM

200

400

600

V

On-State RMS Current

(TC = 80 OC) 180O Conduction Angles

IT(RMS)

0.8

A

Peak Non-Repetitive Surge Current

(1/2 Cycle, Sine Wave, 60 Hz, TJ = 25 OC)

ITSM

10

A

Circuit Fusing Considerations (t = 8.3 ms)

I

2t

0.415

A

2s

Forward Peak Gate Power (Pulse Width ≤ 1 μs)

PGM

0.1

W

Forward Average Gate Power (t = 8.3 ms)

PG(AV)

0.1

W

Peak Gate Current – Forward (Pulse Width ≤ 1 μs)

IGM

1

A

Peak Gate Voltage – Reverse (Pulse Width ≤ 1 μs)

VGRM

5

V

Operating Junction Temperature Range

TJ

- 40 to + 110

O

C

Storage Temperature Range

TS

- 40 to + 150

O

C

Characteristics at Ta = 25 OC

Parameter

Symbol

Max.

Unit

Peak Forward or Reverse Blocking Current

2)

at VD = Rated VDRM and VRRM, RGK = 1 KΩ

IDRM, IRRM

10

μA

Peak Forward On-State Voltage

1)

at ITM = 1 A Peak

VTM

1.7

V

Gate Trigger Current

3)

at VAK = 7 V, RL = 100 Ω

IGT

200

μA

Holding Current

2)

at

VAK = 7 V, Initiating Current = 20 mA

TC = 25 OC

TC = - 40 OC

IH

5

10

mA

Latch Current

at

VAK = 7 V, Ig = 200 μA

TC = 25 OC

TC = - 40 OC

IL

10

15

mA

Gate Trigger Voltage

3)

at

VAK = 7 V, RL = 100 Ω

TC = 25 OC

TC = - 40 OC

VGT

0.8

1.2

V

1) Indicates pulse teat width ≤ 1 ms, duty cycle ≤ 1%

2) RGK = 1 KΩ included in measurement

3) Does not include RGK in measurement

4) VDRM and VRRM for all types can be applied on continous basis. Ratings apply for zero negative gate voltage; however,

positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be

tested with a constant current sourse such that the voltage ratings of the devices are exceeded.

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