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Dated : 15/03/2008
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
1SS5004WS
SILICON EPITAXIAL PLANAR DIODE
High Voltage Switching Diode
Features
• Fast switching speed
• High conductance
• High reverse breakdown voltage rating
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Repetitive Peak Reverse Voltage
VRRM
400
V
Reverse Voltage
VR
350
V
Continuous Forward Current
IF
225
mA
Repetitive Peak Forward Current
IFRM
625
mA
Non-Repetitive Peak Forward Surge Current (1 ms)
IFSM
2
A
Power Dissipation
Pd
350
mW
Junction Temperature
Tj
150
O
C
Storage Temperature Range
Ts
- 65 to + 150
O
C
Characteristics at Ta = 25 OC
Parameter
Symbol
Min.
Max.
Unit
Forward Voltage
at IF = 20 mA
at IF = 100 mA
at IF = 200 mA
VF
-
-
-
0.87
1
1.25
V
Reverse Current
at VR = 240 V
IR
-
100
nA
Reverse Breakdown Voltage
at IR = 150 µA
V(BR)R
400
-
V
Total Capacitance
at VR = 0 , f = 1 MHz
CT
-
5
pF
Reverse Recovery Time
at IF = IR = 30 mA , irr = 3 mA, RL = 100 Ω
trr
-
100
ns
Anode
2
Top View
Marking Code: "YM"
Simplified outline SOD-323 and symbol
1
YM
2
PINNING
1
PIN
Cathode
DESCRIPTION
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