Datenblatt-Suchmaschine für elektronische Bauteile |
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CSD-S40228G Datenblatt(PDF) 4 Page - China Semiconductor Corporation |
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CSD-S40228G Datenblatt(HTML) 4 Page - China Semiconductor Corporation |
4 / 7 page CHINA SEMICONDUCTOR Spec. No. CORPORATION Rev. Absolute Maximum Rating - (Ta=25 ) Symbol Unit PAD mW IAF mA Peak Current Per Dice(duty cycle 1/10,1KHz) IPF mA - mA/ VR V Topr Tstg Electro-optical Characteristics - Symbol Min. Typ. Max. Unit VF - 2.1 2.8 V Iv 1.8 4.5 - mcd P - 570 - nm - - 30 nm IR - - 100 A IV-m - - 2:1 . Page 3/6 Parameter -40 ~ +105 0.33 Forward Voltage Per Segment Luminous Intensity Per Segment Spectrum Radiation Bandwidth Reverse Current Peak Emission Wavelength Luminous Intensity Matching Ratio A (Ta=25 ) Condition Storage Temp. 25 90 Derating Linear From 25 Per Dice IF=20mA VR=5V PS-DD-S40228/S40229G 5 IF=20mA Model No CSD-S40228/S40229G IF=20mA IF=10mA Continuous Forward Current Per Dice Parameter Rating -40 ~ +105 Operating Temp. Power Dissipation Per Dice 70 Reverse Voltage Per Dice IF=10mA http://www.csctw.com.tw |
Ähnliche Teilenummer - CSD-S40228G |
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Ähnliche Beschreibung - CSD-S40228G |
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