1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

High Current Transistors

NPN Silicon

MAXIMUM RATINGS

Rating

Symbol

BC

635

BC

637

BC

639

Unit

Collector – Emitter Voltage

VCEO

45

60

80

Vdc

Collector – Base Voltage

VCBO

45

60

80

Vdc

Emitter – Base Voltage

VEBO

5.0

Vdc

Collector Current — Continuous

IC

0.5

Adc

Total Device Dissipation @ TA = 25°C

Derate above 25

°C

PD

625

5.0

mW

mW/

°C

Total Device Dissipation @ TC = 25°C

Derate above 25

°C

PD

1.5

12

Watt

mW/

°C

Operating and Storage Junction

Temperature Range

TJ, Tstg

– 55 to +150

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Ambient

RqJA

200

°C/W

Thermal Resistance, Junction to Case

RqJC

83.3

°C/W

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector – Emitter Breakdown Voltage(1)

(IC = 10 mAdc, IB = 0)

BC635

BC637

BC639

V(BR)CEO

45

60

80

—

—

—

—

—

—

Vdc

Collector – Base Breakdown Voltage

(IC = 100 µAdc, IE = 0)

BC635

BC637

BC639

V(BR)CBO

45

60

80

—

—

—

—

—

—

Vdc

Emitter – Base Breakdown Voltage

(IE = 10 mAdc, IC = 0)

V(BR)EBO

5.0

—

—

Vdc

Collector Cutoff Current

(VCB = 30 Vdc, IE = 0)

(VCB = 30 Vdc, IE = 0, TA = 125°C)

ICBO

—

—

—

—

100

10

nAdc

µAdc

1. Pulse Test: Pulse Width

≤ 300 µs, Duty Cycle 2.0%.

Order this document

by BC635/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

BC635

BC637

BC639

CASE 29–04, STYLE 14

TO–92 (TO–226AA)

1

2

3

COLLECTOR

2

3

BASE

1

EMITTER