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BC807-40LT1 Datenblatt(PDF) 1 Page - Motorola, Inc |
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BC807-40LT1 Datenblatt(HTML) 1 Page - Motorola, Inc |
1 / 4 page 1 Motorola Small–Signal Transistors, FETs and Diodes Device Data General Purpose Transistors PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO –45 V Collector – Base Voltage VCBO –50 V Emitter – Base Voltage VEBO –5.0 V Collector Current — Continuous IC –500 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25 °C PD 225 1.8 mW mW/ °C Thermal Resistance, Junction to Ambient RqJA 556 °C/W Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25 °C PD 300 2.4 mW mW/ °C Thermal Resistance, Junction to Ambient RqJA 417 °C/W Junction and Storage Temperature TJ, Tstg – 55 to +150 °C DEVICE MARKING BC807–16LT1 = 5A; BC807–25LT1 = 5B; BC807–40LT1 = 5C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (IC = –10 mA) V(BR)CEO –45 — — V Collector – Emitter Breakdown Voltage (VEB = 0, IC = –10 µA) V(BR)CES –50 — — V Emitter – Base Breakdown Voltage (IE = –1.0 mA) V(BR)EBO –5.0 — — V Collector Cutoff Current (VCB = –20 V) (VCB = –20 V, TJ = 150°C) ICBO — — — — –100 –5.0 nA µA 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. Thermal Clad is a trademark of the Bergquist Company. Order this document by BC807–16LT1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA BC807-16LT1 BC807-25LT1 BC807-40LT1 1 2 3 CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB) © Motorola, Inc. 1996 COLLECTOR 3 2 BASE 1 EMITTER |
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