Datenblatt-Suchmaschine für elektronische Bauteile |
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TPIC1501 Datenblatt(PDF) 4 Page - Texas Instruments |
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TPIC1501 Datenblatt(HTML) 4 Page - Texas Instruments |
4 / 17 page TPIC1501A QUAD AND HEX POWER DMOS ARRAY SLIS046A – MAY 1995 – REVISED JUNE 1996 4 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 source-to-drain diode characteristics, Q1A, Q2A, TC = 25°C PARAMETER TEST CONDITIONS MIN TYP MAX UNIT trr Reverse-recovery time IS = 1.5 A, VDS 14 V VGS = 0, di/dt 100 A/ µs 70 ns QRR Total diode charge VDS = 14 V, See Figures 1 and 23 di/dt = 100 A/ µs, 90 nC trr Reverse-recovery time IS = 2 A, VGS = 0, 75 ns QRR Total diode charge S VDS = 14 V, GS di/dt = 100 A/ µs 110 nC resistive-load switching characteristics, Q1A, Q1B, Q2A, Q2B, TC = 25°C PARAMETER TEST CONDITIONS MIN TYP MAX UNIT td(on) Turn-on delay time 20 td(off) Turn-off delay time VDD = 14 V, RL = 9.3 Ω,ten = 10 ns, 30 ns tr Rise time DD , tdis = 10 ns, L , See Figure 3 en , 15 ns tf Fall time 25 Qg Total gate charge V14 V I1 5 A V10 V 5.6 7 Qgs(th) Threshold gate-to-source charge VDS = 14 V, See Figure 4 ID = 1.5 A, VGS = 10 V, 0.8 1 nC Qgd Gate-to-drain charge See Figure 4 1.4 1.75 L(drain) Internal drain inductance 5 nH L(source) Internal source inductance 5 nH r(gate) Internal gate resistance 0.25 Ω |
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