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TPIC1504 Datenblatt(PDF) 4 Page - Texas Instruments |
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TPIC1504 Datenblatt(HTML) 4 Page - Texas Instruments |
4 / 16 page TPIC1504 QUAD AND HEX POWER DMOS ARRAY SLIS057 – OCTOBER 1996 4 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 resistive-load switching characteristics, Q1A, Q1B, Q2A, Q2B, TC = 25°C PARAMETER TEST CONDITIONS MIN TYP MAX UNIT td(on) Turn-on delay time 11 td(off) Turn-off delay time VDD = 14 V, RL = 18.7 Ω,ten = 10 ns, 16 ns tr Rise time DD , tdis = 10 ns, L , See Figure 3 en , 3 ns tf Fall time 4 Qg Total gate charge VDS = 14 V, ID = 750 mA, VGS = 10 V, 1.8 2.5 Qgs(th) Threshold gate-to-source charge VDS = 14 V, ID = 750 mA, See Figure 4 and Figure 21 VGS = 10 V, 0.3 0.4 nC Qgd Gate-to-drain charge 0.5 0.6 LD Internal drain inductance 7 nH LS Internal source inductance 7 nH Rg Internal gate resistance 10 Ω electrical characteristics, Q3A, Q3B, Q4A, Q4B, Q5A, Q5B, TC = 25°C (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT V(BR)DSX Drain-to-source breakdown voltage ID = 250 µA, VGS = 0 20 V VGS(th) Gate-to-source threshold voltage ID = 1 mA, See Figure 6 VDS = VGS, 1.5 1.9 2.2 V V(BR) Reverse drain-to-GND breakdown voltage Drain-to-GND current = 250 µA (D3) 20 V V(DS)on Drain-to-source on-state voltage ID = 2 A, VGS = 10 V, See Notes 3 and 4 0.3 0.35 V VF Forward on-state voltage, GND-to-VDD3 ID = 2 A (D3), See Notes 3 and 4 1.5 V VF(SD) Forward on-state voltage, source-to-drain IS = 2 A, VGS = 0 See Notes 3 and 4 and Figure 20 0.85 1.2 V IDSS Zero gate voltage drain current VDS = 16 V, TC = 25°C 0.05 1 µA IDSS Zero-gate-voltage drain current DS , VGS = 0 TC = 125°C 0.5 10 µA IGSSF Forward gate current, drain short-circuited to source VGS = 16 V, VDS = 0 10 100 nA IGSSR Reverse gate current, drain short-circuited to source VSG = 16 V, VDS = 0 10 100 nA Ilk Leakage current, VDD3-to-GND, VDGND =16V TC = 25°C 0.05 1 µA Ilkg g, DD3 , gate shorted to source VDGND = 16 V TC = 125°C 0.5 10 µA rDS( ) Static drain to source on state resistance VGS = 10 V, ID = 2 A, See Notes 3 TC = 25°C 0.15 0.175 Ω rDS(on) Static drain-to-source on-state resistance See Notes 3 and 4 and Figure 10 TC = 125°C 0.24 0.275 Ω gfs Forward transconductance VDS = 14 V, ID = 1 A, See Notes 3 and 4 and Figure 14 1 1.7 S Ciss Short-circuit input capacitance, common source 160 Coss Short-circuit output capacitance, common source VDS = 14 V, f=1MHz VGS = 0, See Figure 18 220 pF Crss Short-circuit reverse transfer capacitance, common source f = 1 MHz, See Figure 18 110 NOTES: 3: Technique should limit TJ – TC to 10°C maximum. 4: These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts. |
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