Datenblatt-Suchmaschine für elektronische Bauteile |
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TPIC2701M Datenblatt(PDF) 4 Page - Texas Instruments |
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TPIC2701M Datenblatt(HTML) 4 Page - Texas Instruments |
4 / 15 page TPIC2701 7-CHANNEL COMMON-SOURCE POWER DMOS ARRAY SLIS019A – SEPTEMBER 1992 – REVISED SEPTEMBER 1996 4 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 clamp diode characteristics, TC = 25°C PARAMETER TEST CONDITIONS TPIC2701 UNIT PARAMETER TEST CONDITIONS MIN TYP MAX UNIT VF Forward on-voltage IF = 0.5 A 1 1.5 V VBR Breakdown voltage IR = 1 µA 60 V IR Reverse leakage current VR = 48 V 0.05 1 µA trr(CD) Reverse-recovery time IF = 0.1 A, di/dt = 25 A/ µs, 90 ns QRR Total source-drain diode charge F VCD = 48 V, µ See Figure 1 100 nC clamp diode characteristics over operating case temperature range (unless otherwise noted) (see Note 4) PARAMETER TEST CONDITIONS TPIC2701M UNIT PARAMETER TEST CONDITIONS MIN TYP MAX UNIT VF Forward voltage IF = 0.5 A 1 1.5 V V(BR) Breakdown voltage IR = 1 µA, TC = 25°C 60 V V(BR) Breakdown voltage IR = 1 mA 60 V IR Reverse leakage current VR =48V TC = 25°C 0.05 1 µA IR Reverse leakage current VR = 48 V 10 µA trr(SD) Reverse recovery time, source-to-drain IF = 0.1 A, di/dt = 25 A / µs, TC = 25°C 90 ns QRR Total source-to-drain diode charge F VCD = 48 V, µ C See Figure 1 100 nC NOTE 4: Pulse testing techniques are used to maintain the virtual junction temperature as close to the case temperature as possible. Thermal effects must be taken into account separately. resistive-load switching characteristics, TC = 25°C PARAMETER TEST CONDITIONS TPIC2701 UNIT PARAMETER TEST CONDITIONS MIN TYP MAX UNIT td(on) Turn-on delay time 10 td(off) Turn-off delay time VDD = 25 V, RL = 100 Ω,ten = 10 ns, 30 ns tr Rise time DD , tdis = 10 ns, L , See Figure 2 en , 15 ns tf Fall time 5 Qg Total gate charge V48 V I 0 25 A V10 V 2.8 3.6 Qgs Gate-source charge VDS = 48 V, See Figure 3 ID = 0.25 A, VGS = 10 V, 1.6 2 nC Qgd Gate-drain charge See Figure 3 1.2 1.6 |
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