Datenblatt-Suchmaschine für elektronische Bauteile |
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2SC3874 Datenblatt(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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2SC3874 Datenblatt(HTML) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
2 / 4 page JMnic Product Specification 2 Silicon NPN Power Transistors 2SC3874 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0 400 V VCEsat Collector-emitter saturation voltage IC=10A ;IB=2A 1.0 V VBEsat Base-emitter saturation voltage IC=10A ;IB=2A 1.5 V ICBO Collector cut-off current VCB=500V; IE=0 100 μA IEBO Emitter cut-off current VEB=5V; IC=0 100 μA hFE-1 DC current gain IC=0.1A ; VCE=5V 15 hFE-2 DC current gain IC=10A ; VCE=5V 8 fT Transition frequency IC=1A ; VCE=10V;f=1MHz 20 MHz Switching times ton Turn-on time 0.7 μs tstg Storage time 2.0 μs tf Fall time IC=10A; VCC=150V IB1=2A;IB2=-4A 0.3 μs |
Ähnliche Teilenummer - 2SC3874 |
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Ähnliche Beschreibung - 2SC3874 |
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