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UC2625DWTR Datenblatt(PDF) 11 Page - Texas Instruments |
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UC2625DWTR Datenblatt(HTML) 11 Page - Texas Instruments |
11 / 15 page 11 UC1625 UC2625 UC3625 For drives where speed is critical, P-Channel MOSFETs can be driven by emitter followers as shown in Fig. 8. Here, both the level shift NPN and the PNP must with- stand high voltages. A zener diode is used to limit gate-source voltage on the MOSFET. A series gate re- sistor is not necessary, but always advisable to control overshoot and ringing. High-voltage optocouplers can quickly drive high-voltage MOSFETs if a boost supply of at least 10 volts greater than the motor supply is provided (See Fig. 9.) To protect the MOSFET, the boost supply should not be higher than 18 volts above the motor supply. For under 200V 2-quadrent applications, a power NPN driven by a small P-Channel MOSFET will perform well as a high-side driver as in Fig. 10. A high voltage small-signal NPN is used as a level shift and a high volt- age low-current MOSFET provides drive. Although the NPN will not saturate if used within its limitations, the base-emitter resistor on the NPN is still the speed limiting component. Fig. 11 shows a power NPN Darlington drive technique using a clamp to prevent deep saturation. By limiting sat- uration of the power device, excessive base drive is mini- mized and turn-off time is kept fairly short. Lack of base series resistance also adds to the speed of this ap- proach. Figure 9. Optocoupled N-channel high-side driver. Figure 8. Fast high-side P-channel driver. APPLICATION INFORMATION (cont.) Figure 11. Power NPN low-side driver. Figure 10. Power NPN high-side driver. |
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