Datenblatt-Suchmaschine für elektronische Bauteile |
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2SC4467 Datenblatt(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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2SC4467 Datenblatt(HTML) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
2 / 4 page JMnic Product Specification 2 Silicon NPN Power Transistors 2SC4467 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0 120 V VCEsat Collector-emitter saturation voltage IC=3A ;IB=0.3A 1.5 V ICBO Collector cut-off current VCB=160V; IE=0 10 μA IEBO Emitter cut-off current VEB=6V; IC=0 10 μA hFE DC current gain IC=3A ; VCE=4V 50 180 COB Output capacitance IE=0 ; VCB=10V,f=1MHz 200 pF fT Transition frequency IC=0.5A ; VCE=12V 20 MHz Switching times ton Turn-on time 0.13 Μs ts Storage time 3.50 Μs tf Fall time IC=4A;RL=10Ω IB1=- IB2=0.4A VCC=40V 0.32 Μs hFE Classifications O P Y 50-100 70-140 90-180 |
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