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BA-8E9UW Datenblatt(PDF) 3 Page - BRIGHT LED ELECTRONICS CORP

Teilenummer BA-8E9UW
Bauteilbeschribung  hi-eff red chips, which are made from GaAsP on GaP substrate
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Hersteller  BRIGHT [BRIGHT LED ELECTRONICS CORP]
Direct Link  http://www.brightled.co.kr
Logo BRIGHT - BRIGHT LED ELECTRONICS CORP

BA-8E9UW Datenblatt(HTML) 3 Page - BRIGHT LED ELECTRONICS CORP

  BA-8E9UW Datasheet HTML 1Page - BRIGHT LED ELECTRONICS CORP BA-8E9UW Datasheet HTML 2Page - BRIGHT LED ELECTRONICS CORP BA-8E9UW Datasheet HTML 3Page - BRIGHT LED ELECTRONICS CORP  
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T L
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Ver.1.0 Page 3 of 3
SINCE 1981
●
Typical Electro-Optical Characteristics Curves
(25℃ Ambient Temperature Unless Otherwise Noted)
Ambient Temperature
Forward Voltage
40
Fig.4 Relative Luminous
Forward Current(mA)
Forward Voltage (V)
30
20
10
0.5
0
1.5
1.0
Forward Current
Intensity VS.
1
2.0
0
23
4
30
20
10
50
40
Ambient Temperature Ta( C)
50
20
10
0
30
40
120
100
80
60
20
40
Fig.5 Forward Current
Ambient Temperature Ta( C)
5
50
0
-40
1.0
0.5
1.5
2.5
2.0
3.0
Ambient Temperature
Derating Curve VS.
-20
0
20
60
40
Fig.1 Relative Radiant Intensity VS. Wavelength
Fig.2 Forward Current VS.
560
0
590
0.5
1.0
680
Fig.3 Relative Luminous
Wavelength(nm)
620
650
Intensity VS.
710
740
佰鴻工業股份有限公司
http://www.brtled.com


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