Datenblatt-Suchmaschine für elektronische Bauteile |
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FDS4897AC Datenblatt(PDF) 3 Page - Fairchild Semiconductor |
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FDS4897AC Datenblatt(HTML) 3 Page - Fairchild Semiconductor |
3 / 10 page ©2008 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com FDS4897AC Rev.C Electrical Characteristics T J = 25 °C unless otherwise noted Drain-Source Diode Characteristics Symbol Parameter Test Conditions Type Min Typ Max Units VSD Source to Drain Diode Forward Voltage VGS = 0 V, IS = 1.3 A (Note 2) VGS = 0 V, IS = -1.3 A (Note 2) Q1 Q2 0.75 -0.76 1.2 -1.2 V trr Reverse Recovery Time Q1 IF = 6.1 A, di/dt = 100 A/s Q2 IF = -5.2 A, di/dt = 100 A/s Q1 Q2 17 20 31 36 ns Qrr Reverse Recovery Charge Q1 Q2 7 10 15 20 nC b) 135 °C/W when mounted on a minimun pad a) 78 °C/W when mounted on a 1 in2 pad of 2 oz copper Notes: 1: RθJA is determined with the device mounted on a 1in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. 2: Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%. 3: Starting TJ = 25 °C, N-ch: L = 3 mH, IAS = 5 A, VDD = 40 V, VGS = 10 V; P-ch: L = 3 mH, IAS = -7 A, VDD = -40 V, VGS = -10 V. |
Ähnliche Teilenummer - FDS4897AC |
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Ähnliche Beschreibung - FDS4897AC |
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