Datenblatt-Suchmaschine für elektronische Bauteile |
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TPC8122 Datenblatt(PDF) 4 Page - Toshiba Semiconductor |
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TPC8122 Datenblatt(HTML) 4 Page - Toshiba Semiconductor |
4 / 7 page TPC8122 2009-09-29 4 −100 −100 −8 −10 −5 −1.6 −2 −0.8 −1 VGS = −4V −10 10 100 −0.1 − 1 −10 1 Ta = −55°C 25 100 −0.1 − 1 −10 0.1 1 10 100 −6 ID = −12 A −3 0 − 2 −4 −6 0 − 0.1 −0.2 −0.3 −0.4 −0.5 −55°C Ta = 100°C 25°C −1 − 2 −3 −4 0 − 10 −20 −30 −40 −50 0 0 − 0.4 −0.8 −1.2 0 − 10 −20 −30 −40 −50 −3.4 −10 −3 −4 −8 −3.8 −4.5 −6 −2.8 VGS = −2.6V −3.2 −3.6 −5 −3.2 −10 −3 −4 −3.8 −2.8 0 − 0.2 −0.4 −0.6 0 − 5 −10 −15 −20 −25 −6 −3.4 VGS = −2.6 V −3.6 −4.2 −4.5 −5 −8 ID – VDS ID – VDS ID – VGS VDS – VGS |Yfs| – ID RDS (ON) – ID Common source Ta = 25°C Pulse test Common source Ta = 25°C Pulse test Common source VDS = −10 V Pulse test Common source Ta = 25°C Pulse test Common source VDS = −10 V Pulse test Common source Ta = 25°C Pulse test Drain −source voltage VDS (V) Drain-source voltage VDS (V) Gate −source voltage VGS (V) Gate −source voltage VGS (V) Drain current ID (A) Drain current ID (A) |
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