MC-458CB642XS datasheet(6/14 Pages) ELPIDA

Teilenummer	MC-458CB642XS

Bauteilbeschribung	8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)

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Hersteller	ELPIDA [Elpida Memory]

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Data Sheet E0115N20

6

MC-458CB642XS

DC Characteristics (Recommended Operating Conditions unless otherwise noted)

Parameter

Symbol

Test condition

MIN.

MAX.

Unit

Notes

Operating current

ICC1

Burst length = 1, tRC

≥ tRC (MIN.)

/CAS latency = 2

440

mA

1

/CAS latency = 3

460

Precharge standby current in

ICC2P

CKE

≤ VIL (MAX.), tCK = 15 ns

4

mA

power down mode

ICC2PS

CKE

≤ VIL (MAX.), tCK = ∞

4

Precharge standby current in

ICC2N

CKE

≥ VIH (MIN.), tCK = 15 ns, /CS ≥ VIH (MIN.),

80

mA

non power down mode

Input signals are changed one time during 30 ns.

ICC2NS

CKE

≥ VIH (MIN.), tCK = ∞, Input signals are stable.

32

Active standby current in

ICC3P

CKE

≤ VIL (MAX.), tCK = 15 ns

20

mA

power down mode

ICC3PS

CKE

≤ VIL (MAX.), tCK = ∞

16

Active standby current in

ICC3N

CKE

≥ VIH (MIN.), tCK = 15 ns, /CS ≥ VIH (MIN.),

120

mA

non power down mode

Input signals are changed one time during 30 ns.

ICC3NS

CKE

≥ VIH (MIN.), tCK = ∞, Input signals are stable.

80

Operating current

ICC4

tCK

≥ tCK (MIN.), IO = 0 mA

/CAS latency = 2

580

mA

2

(Burst mode)

/CAS latency = 3

740

CBR (Auto) refresh current

ICC5

tRC

≥ tRC (MIN.)

/CAS latency = 2

920

mA

3

/CAS latency = 3

960

Self refresh current

ICC6

CKE

≤ 0.2 V

-**

8

mA

-**L

3.2

mA

Input leakage current

II(L)

VI = 0 to 3.6 V, All other pins not under test = 0 V

– 4

+4

µA

Output leakage current

IO(L)

DOUT is disabled, VO = 0 to 3.6 V

–1.5

+1.5

µA

High level output voltage

VOH

IO = –4.0 mA

2.4

V

Low level output voltage

VOL

IO = +4.0 mA

0.4

V

Notes 1. ICC1 depends on output loading and cycle rates. Specified values are obtained with the output open. In

addition to this, ICC1 is measured on condition that addresses are changed only one time during tCK (MIN.).

2. ICC4 depends on output loading and cycle rates. Specified values are obtained with the output open. In

addition to this, ICC4 is measured on condition that addresses are changed only one time during tCK (MIN.).

3. ICC5 is measured on condition that addresses are changed only one time during tCK (MIN.).

Ähnliche Beschreibung - MC-458CB642XS

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
Elpida Memory	MC-458CB64ESB	141Kb / 16P	8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)
NEC	MC-458CB64ESB	126Kb / 6P	8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM
Elpida Memory	MC-458CB641ES	151Kb / 16P	8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)
NEC	MC-458CB641ES	137Kb / 6P	8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM
Elpida Memory	MC-45V8AB642KS	150Kb / 16P	8M-WORD BY 64-BIT VirtualChannelTM DYNAMIC RAM MODULE (SO DIMM)
NEC	MC-458CA721ESA	142Kb / 6P	8M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM
Elpida Memory	MC-458CA721ESA	156Kb / 16P	8M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)
NEC	MC-4516CD641ES	150Kb / 6P	16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM
Elpida Memory	MC-4516CD641ES	154Kb / 16P	16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)
Elpida Memory	MC-4516CD642XS	136Kb / 14P	16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)

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