The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local Elpida Memory, Inc. for

availability and additional information.

Elpida Memory, Inc. 2001-2006

MOS INTEGRATED CIRCUIT

MC-4R256CPE6C

Direct Rambus

256M-BYTE (128M-WORD x 16-BIT)

PRELIMINARY DATA SHEET

Document No. E0043N11 (Ver. 1.1)

(Previous No. M14809EJ2V0DS00)

Date Published February 2006 CP (K)

Printed in Japan

Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.

Description

The Direct Rambus RIMM module is a general-purpose high-performance memory module subsystem suitable for

use in a broad range of applications including computer memory, personal computers, workstations, and other

applications where high bandwidth and low latency are required.

MC-4R256CPE6C modules consists of sixteen 128M Direct Rambus DRAM (Direct RDRAM™) devices

(

Rambus Signaling Level (RSL) technology permits 600MHz, 711MHz or 800MHz transfer rates while using

conventional system and board design technologies.

Direct RDRAM devices are capable of sustained data transfers at 1.25 ns per two bytes (10 ns per sixteen bytes).

The architecture of the Direct RDRAM enables the highest sustained bandwidth for multiple, simultaneous, randomly

addressed memory transactions. The separate control and data buses with independent row and column control yield

over 95 % bus efficiency. The Direct RDRAM's 32 banks support up to four simultaneous transactions per device.

Features

• 184 edge connector pads with 1mm pad spacing

• 256 MB Direct RDRAM storage

• Gold plated contacts

• RDRAMs use Chip Scale Package (CSP)

• Serial Presence Detect support

• Operates from a 2.5 V supply

• Low power and powerdown self refresh modes

• Separate Row and Column buses for higher efficiency

• Over Drive Factor (ODF) support

This product became EOL in May, 2002.