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ADS8556IPMR Datenblatt(PDF) 2 Page - Texas Instruments

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Teilenummer ADS8556IPMR
Bauteilbeschribung  16-14-12-Bit Six-Channel Simultaneous Sampling ANALOG-TO-DIGITAL CONVERTERS
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Hersteller  TI [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI - Texas Instruments

ADS8556IPMR Datenblatt(HTML) 2 Page - Texas Instruments

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ABSOLUTE MAXIMUM RATINGS
(1)
ADS8556
ADS8557
ADS8558
SBAS404A – OCTOBER 2006 – REVISED AUGUST 2009 ............................................................................................................................................... www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
PACKAGE/ORDERING INFORMATION(1)
RESOLUTION
PACKAGE-
PACKAGE
ORDERING
TRANSPORT
PRODUCT
(Bits)
LEAD
DESIGNATOR
NUMBER
MEDIA, QUANTITY
ADS8556IPM
Tray, 160
ADS8556I
16
LQFP-64
PM
ADS8556IPMR
Tape and Reel, 1000
ADS8557IPM
Tray, 160
ADS8557I
14
LQFP-64
PM
ADS8557IPMR
Tape and Reel, 1000
ADS8558IPM
Tray, 160
ADS8558I
12
LQFP-64
PM
ADS8558IPMR
Tape and Reel, 1000
(1)
For the most current package and ordering information see the Package Option Addendum at the end of this document, or see the TI
web site at www.ti.com.
Over operating free-air temperature range, unless otherwise noted.
ADS8556, ADS8557, ADS8558
UNIT
Supply voltage, HVDD to AGND
–0.3 to +18
V
Supply voltage, HVSS to AGND
–18 to +0.3
V
Supply voltage, AVDD to AGND
–0.3 to +6
V
Supply voltage, BVDD to BGND
–0.3 to +6
V
Analog input voltage
HVSS – 0.3 to HVDD + 0.3
V
Reference input voltage with respect to AGND
AGND – 0.3 to AVDD + 0.3
V
Digital input voltage with respect to BGND
BGND – 0.3 to BVDD + 0.3
V
Ground voltage difference AGND to BGND
±0.3
V
Input current to all pins except supply
–10 to +10
mA
Maximum virtual junction temperature, TJ
+150
°C
Human body model (HBM)
±2000
V
JEDEC standard 22, test method A114-C.01, all pins
ESD ratings
Charged device model (CDM)
±500
V
JEDEC standard 22, test method C101, all pins
(1)
Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
2
Copyright © 2006–2009, Texas Instruments Incorporated
Product Folder Link(s): ADS8556 ADS8557 ADS8558


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