Datenblatt-Suchmaschine für elektronische Bauteile |
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CSD16325Q5 Datenblatt(PDF) 1 Page - Texas Instruments |
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CSD16325Q5 Datenblatt(HTML) 1 Page - Texas Instruments |
1 / 10 page 1 D 2 D 3 D 4 D D 5 G 6 S 7 S 8 S P0094-01 VGS − GatetoSourceVoltage − V 0 1 2 3 4 5 0 1 2 3 4 5 6 7 8 9 10 G006 ID =30A TC =125 C ° TC =25 C ° Qg − GateCharge − nC 0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 20 25 30 35 40 G003 ID DS =30A V =12.5V CSD16325Q5 www.ti.com ........................................................................................................................................... SLPS218A – AUGUST 2009 – REVISED SEPTEMBER 2009 N-Channel NexFET™ Power MOSFETs Check for Samples: CSD16325Q5 1 FEATURES Table 1. PRODUCT SUMMARY 2 • Optimized for 5V Gate Drive • Ultralow Qg and Qgd VDS Drain to Source Voltage 25 V Qg Gate Charge Total (4.5V) 18 nC • Low Thermal Resistance Qgd Gate Charge Gate to Drain 3.5 nC • Avalanche Rated VGS = 3V 2.1 m Ω • Pb Free Terminal Plating RDS(on) Drain to Source On Resistance VGS = 4.5V 1.7 m Ω • RoHS Compliant VGS = 8V 1.5 m Ω • Halogen Free VGS(th) Threshold Voltage 1.1 V • SON 5-mm × 6-mm Plastic Package ORDERING INFORMATION APPLICATIONS Device Package Media Qty Ship • Point-of-Load Synchronous Buck in SON 5-mm × 6-mm 13-Inch Tape and CSD16325Q5 2500 Networking, Telecom and Computing Systems Plastic Package Reel Reel • Optimized for Synchronous FET Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION TA = 25°C unless otherwise stated VALUE UNIT VDS Drain to Source Voltage 25 V The NexFET™ power MOSFET has been designed VGS Gate to Source Voltage +10 / –8 V to minimize losses in power conversion applications and optimized for 5V gate drive applications. Continuous Drain Current, TC = 25°C 100 A ID Continuous Drain Current(1) 33 A Top View IDM Pulsed Drain Current, TA = 25°C (2) 210 A PD Power Dissipation(1) 3.1 W TJ, Operating Junction and Storage –55 to 150 °C TSTG Temperature Range Avalanche Energy, single pulse EAS 500 mJ ID = 100A, L = 0.1mH, RG = 25Ω (1) RθJA = 38°C/W on 1-inch 2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu pad on a 0.06-inch (1.52-mm) thick FR4 PCB. (2) Pulse duration ≤300μs, duty cycle ≤2% RDS(on) vs VGS GATE CHARGE 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. 2 NexFET is a trademark of Texas Instruments. PRODUCTION DATA information is current as of publication date. Copyright © 2009, Texas Instruments Incorporated Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. |
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