IXZH10N50LA datasheet(1/9 Pages) IXYS

Teilenummer	IXZH10N50LA

Bauteilbeschribung	RF Power MOSFET

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Hersteller	IXYS [IXYS Corporation]

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IXZH10N50LA/B

RF Power MOSFET

VDSS

=

500 V

ID25

=

10 A

Symbol

Test Conditions

Maximum Ratings

VDSS

TJ = 25°C to 150°C

500

V

VDGR

TJ = 25°C to 150°C; RGS = 1 MΩ

500

V

VGS

Continuous

±20

V

VGSM

Transient

±30

V

ID25

Tc = 25°C

10

A

IDM

Tc = 25°C, pulse width limited by TJM

60

A

IAR

Tc = 25°C

16

A

EAR

Tc = 25°C

TBD

mJ

dv/dt

IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS,

Tj ≤ 150°C, RG = 0.2Ω

5 V/ns

IS = 0

>200 V/ns

PDC

(1)

250

W

PDHS

Tc = 25°C, Derate 6.0W/°C above 25°C

180

W

PDAMB

Tc = 25°C

3

W

RthJC

0.60 C/W

RthJHS

0.85 C/W

min.

typ.

max.

VDSS

VGS = 0 V, ID = 4 ma

500

V

VGS(th)

VDS = VGS, ID = 250µΑ

3.5

4.95

6.5

V

IGSS

VGS = ±20 VDC, VDS = 0

±100

nA

IDSS

VDS = 0.8VDSS

TJ = 25C

VGS=0

TJ =125C

50

1

µA

mA

RDS(on)

VGS = 20 V, ID = 0.5ID25

Pulse test, t

≤ 300µS, duty cycle d ≤ 2%

1.0

Ω

gfs

VDS = 50 V, ID = 0.5ID25, pulse test

3.8

S

TJ

-55

+175

°C

TJM

+175

°C

Tstg

-55

+ 175

°C

TL

1.6mm(0.063 in) from case for 10 s

300

°C

Weight

4

g

Features

• IXYS RF Low Capacitance Z-MOSTM

Process

• Very low insertion inductance (<2nH)

• No beryllium oxide (BeO) or other

hazardous materials

Advantages

• High Performance RF Z-MOSTM

• Common Source RF Package

A = Gate Source Drain

B = Drain Source Gate

N-Channel Enhancement Mode Linear 175MHz RF MOSFET

Low Capacitance Z-MOSTM MOSFET Process

Optimized for Linear Operation in Common Source Mode

150V (operating)

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