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BC640-16 Datenblatt(PDF) 3 Page - ON Semiconductor

Teilenummer BC640-16
Bauteilbeschribung  High Current Transistors
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Hersteller  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
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BC640-16 Datenblatt(HTML) 3 Page - ON Semiconductor

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BC640, BC640−16
http://onsemi.com
3
−1000
−1
−2
−5
−10
−20
−50
−100
−200
−500
−100
−1
−2 −3 −4 −5 −7 −10
−20 −30−40 −50 −70
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 1. Active Region Safe Operating Area
BC636
BC638
BC640
PD TA 25°C
PD TC 25°C
SOA = 1S
PD TC 25°C
PD TA 25°C
500
200
100
50
20
−1
−3 −5
−10
−30 −50 −100
−300 −500 −1000
IC, COLLECTOR CURRENT (mA)
Figure 2. DC Current Gain
VCE = −2 V
500
300
100
50
20
−1
−10
−100
−1000
IC, COLLECTOR CURRENT (mA)
Figure 3. Current Gain Bandwidth Product
−1
−0.8
−0.6
−0.4
−0.2
0
−1
−10
IC, COLLECTOR CURRENT (mA)
Figure 4. “Saturation” and “On” Voltages
VBE(sat) @ IC/IB = 10
VBE(on) @ VCE = −2 V
VCE(sat) @ IC/IB = 10
−0.2
−1.0
−2.2
−1.6
IC, COLLECTOR CURRENT (mA)
Figure 5. Temperature Coefficients
VCE = −2 VOLTS
DT = 0°C to +100°C
qV for VBE
−A
−B
−L
VCE = −2 V
−100
−1000
−1
−3 −5
−10
−30 −50 −100
−300 −500 −1000


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