Datenblatt-Suchmaschine für elektronische Bauteile |
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TC5565 Datenblatt(PDF) 7 Page - Toshiba Semiconductor |
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TC5565 Datenblatt(HTML) 7 Page - Toshiba Semiconductor |
7 / 9 page TC5565APL-10, TC5565APL-12, TC5565APL-15 TC5565AFL-10, TC5565AFL-12, TC5565AFL-15 Note 1. R/W is High for Read Cycle. 2. Assuming that \CE1 Low transition of CE2 High transition occurs coincident with or after R/W Low transition, Outputs remain in a high impedance state. 3. Assuming that \CEl High transition or CE2 Low transition occurs coincident with or prior to R/W High transition, Outputs remain in a high impedance state. 4. Assuming that \OE is High for Write Cycle, Outputs are in high impedance state during this period. DATA RETENTION CHARACTERISTICS ( Ta=0~70°C) SYMBOL PARAMETER MIN. TYP. MAX. UNIT V DH Data Retention Supply Voltage 2.0 - 5.5 V VDD=3.0V - - 50 I DDS2 Stand by Supply Current VDD=5.5V - - 100 uA t CDR Chip Deselection to Data Retention Mode 0 - - us t R Recovery Mode tRC(1) - - us Note (1) : Read cycle Time. \CE1 Controlled Data Retention Mode (2) CE2 Controlled Data Retention Mode (4) |
Ähnliche Teilenummer - TC5565 |
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Ähnliche Beschreibung - TC5565 |
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