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TC58V64BDC Datenblatt(PDF) 2 Page - Toshiba Semiconductor

Teilenummer TC58V64BDC
Bauteilbeschribung  64-MBIT (8M x 8 BITS) CMOS NAND E2PROM (8M BYTE SmartMediaTM)
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Hersteller  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TC58V64BDC Datenblatt(HTML) 2 Page - Toshiba Semiconductor

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TC58V64BDC
2001-10-24
2/33
BLOCK DIAGRAM
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
RATING
UNIT
VCC
Power Supply Voltage
-0.6~4.6
V
VIN
Input Voltage
-0.6~4.6
V
VI/O
Input/Output Voltage
-0.6 V~VCC + 0.3 V (£ 4.6 V)
V
PD
Power Dissipation
0.3
W
Tstg
Storage Temperature
-20~65
°C
Topr
Operating Temperature
0~55
°C
CAPACITANCE *(Ta
==== 25°C, f ==== 1 MHz)
SYMBOL
PARAMETER
CONDITION
MIN
MAX
UNIT
CIN
Input
VIN = 0 V
¾
10
pF
COUT
Output
VOUT = 0 V
¾
12
pF
* This parameter is periodically sampled and is not tested for every device.
I/O control circuit
Status register
Address register
Command register
Column buffer
Column decoder
Data register
Sense amp
Memory cell array
Control circuit
HV generator
Logic control
BY
/
RY
VCC
I/O1
VSS
I/O8
WP
CE
CLE
ALE
WE
RE
BY
/
RY
Extended area
(embedded ID)
· The products described in this document are subject to the foreign exchange and foreign trade laws.
· The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by
TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its
use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or
others.
· The information contained herein is subject to change without notice.
000707EBA2
I/O control circuit
Status register
Address register
Command register
Column buffer
Column decoder
Data register
Sense amp
Memory cell array
Control circuit
HV generator
Logic control
BY
/
RY
VCC
I/O1
VSS
I/O8
WP
CE
CLE
ALE
WE
RE
BY
/
RY
Extended area
(embedded ID)


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