Datenblatt-Suchmaschine für elektronische Bauteile |
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TC58V64BDC Datenblatt(PDF) 2 Page - Toshiba Semiconductor |
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TC58V64BDC Datenblatt(HTML) 2 Page - Toshiba Semiconductor |
2 / 33 page TC58V64BDC 2001-10-24 2/33 BLOCK DIAGRAM ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER RATING UNIT VCC Power Supply Voltage -0.6~4.6 V VIN Input Voltage -0.6~4.6 V VI/O Input/Output Voltage -0.6 V~VCC + 0.3 V (£ 4.6 V) V PD Power Dissipation 0.3 W Tstg Storage Temperature -20~65 °C Topr Operating Temperature 0~55 °C CAPACITANCE *(Ta ==== 25°C, f ==== 1 MHz) SYMBOL PARAMETER CONDITION MIN MAX UNIT CIN Input VIN = 0 V ¾ 10 pF COUT Output VOUT = 0 V ¾ 12 pF * This parameter is periodically sampled and is not tested for every device. I/O control circuit Status register Address register Command register Column buffer Column decoder Data register Sense amp Memory cell array Control circuit HV generator Logic control BY / RY VCC I/O1 VSS I/O8 WP CE CLE ALE WE RE BY / RY Extended area (embedded ID) · The products described in this document are subject to the foreign exchange and foreign trade laws. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 000707EBA2 I/O control circuit Status register Address register Command register Column buffer Column decoder Data register Sense amp Memory cell array Control circuit HV generator Logic control BY / RY VCC I/O1 VSS I/O8 WP CE CLE ALE WE RE BY / RY Extended area (embedded ID) |
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