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2N2907A Datenblatt(PDF) 1 Page - Comset Semiconductor

Teilenummer 2N2907A
Bauteilbeschribung  SILICON PLANAR EPITAXIAL TRANSISTORS
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Hersteller  COMSET [Comset Semiconductor]
Direct Link  http://comset.halfin.com
Logo COMSET - Comset Semiconductor

2N2907A Datenblatt(HTML) 1 Page - Comset Semiconductor

  2N2907A Datasheet HTML 1Page - Comset Semiconductor 2N2907A Datasheet HTML 2Page - Comset Semiconductor 2N2907A Datasheet HTML 3Page - Comset Semiconductor  
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PNP 2N2907 – 2N2907A
NPN 2N2222 – 2N2222A
COMSET SEMICONDUCTORS
1/3
The 2N2907 and 2N2907aA are PNP transistors mounted in TO-18 metal package with the collector
connected to the case .
They are primarily intended for high speed switching.
NPN complements are 2N2222 and 2N2222A .
Compliance to RoHS
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
Value
Unit
2N2907A
-60
VCEO
Collector-Emitter Voltage
2N2907
-40
V
2N2907A
-60
VCBO
Collector-Base Voltage
2N2907
-60
V
2N2907A
-5
VEBO
Emitter-Base Voltage
2N2907
-5
V
2N2907A
IC
Collector Current
2N2907
-600
mA
2N2907A
PD
Total Power Dissipation
@ Tamb = 25°
2N2907
0.4
Watts
2N2907A
PD
Total Power Dissipation
@ Tcase= 25°
2N2907
1.8
Watts
2N2907A
TJ
Junction Temperature
2N2907
200
°C
2N2907A
TStg
Storage Temperature range
2N2907
-65 to +200
°C
(1) Applicable up to IC = 500mA
THERMAL CHARACTERISTICS
Symbol
Ratings
Value
Unit
2N2907A
RthJ-a
Thermal Resistance, Junction to ambient in
free air
2N2907
350
K/W
2N2907A
RthJ-c
Thermal Resistance, Junction to case
2N2907
146
K/W
S
SIIL
LIIC
CO
ON
N P
PL
LA
AN
NA
AR
R E
EP
PIIT
TA
AX
XIIA
AL
L T
TR
RA
AN
NS
SIIS
ST
TO
OR
RS
S


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