MJ1000 datasheet(3/4 Pages) COMSET

Teilenummer	MJ1000

Bauteilbeschribung	COMPLEMENTARY POWER DARLINGTONS

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Hersteller	COMSET [Comset Semiconductor]

Direct Link	http://comset.halfin.com

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3 / 4 page

MJ900 – MJ901 PNP

MJ1000 – MJ1001 NPN

Page 3 of 4

Symbol

Ratings

Test Condition(s)

Min Typ Mx

Unit

MJ900

MJ1000

IEBO

Emitter Cutoff Current

VBE=5.0 Vdc, IC=0

MJ901

MJ1001

-

2.0

mAdc

VCB=60 V, RBE=1.0 k ohm

MJ900

MJ1000

-

VCB=80 V, RBE=1.0 k ohm

MJ901

MJ1001

-

1.0

VCB=60 V, RBE=1.0 k ohm,

TC=150°C

MJ900

MJ1000

-

ICER

Collector-Emitter Leakage

Current

VCB=80 V, RBE=1.0 k ohm,

TC=150°C

MJ901

MJ1001

-

5.0

mAdc

MJ900

MJ1000

IC=3.0 A, IB=12 mAdc

MJ901

MJ1001

-

2.0

VCE(SAT)

Collector-Emitter saturation

Voltage (*)

IC=8.0 A, IB=40 mAdc

MJ900

MJ1000

MJ901

MJ1001

-

4.0

Vdc

Symbol

Ratings

Test Condition(s)

Min Typ Mx

Unit

MJ900

MJ1000

VF

Forward Voltage (pulse

method)

IF=3 A

MJ901

MJ1001

-

1.8

-

V

MJ900

MJ1000

VBE

Base-Emitter Voltage (*)

IC=3.0 Adc, VCE=3.0Vdc

MJ901

MJ1001

-

2.5

V

MJ900

MJ1000

VCE=3.0 Vdc, IC=3.0 Adc

MJ901

MJ1001

1000

-

MJ900

MJ1000

HFE

DC Current Gain (*)

VCE=3.0 Vdc, IC=4.0 Adc

MJ901

MJ1001

750

-

(*) Pulse Width

≈ 300 µs, Duty Cycle ∠ 2.0%

! ! ! For PNP types current and voltage values are negative ! ! !

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